Organic Field Effect Transistor and Method for Producing the Same

摘要

The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.

主权项

1. An organic field effect transistor, comprising:
a first electrode and a second electrode, the first and second electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first electrode and the second electrode, a gate electrode, a gate insulator arranged between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer comprising an organic matrix material and a first organic dopant, wherein the doped organic semiconducting layer is arranged between the gate insulator and the intrinsic organic semiconducting layer,wherein
the doped organic semiconducting layer comprises a charge carrier channel arranged between the first electrode and the second electrode, an injection layer is arranged adjacent to at least one of the first electrode and the second electrode, and the injection layer is doped with a second dopant of a type that is opposite the first dopant of the doped organic semiconducting layer.