ABRUPT SOURCE/DRAIN JUNCTION FORMATION USING A DIFFUSION FACILITATION LAYER

摘要

A method of forming a field effect transistor (FET) device includes forming a diffusion facilitation layer on top of a semiconductor substrate; forming a doped, raised source/drain (RSD) layer on the diffusion facilitation layer; removing a portion of the diffusion facilitation layer, corresponding to a region directly above a channel region of the FET device; and performing an anneal so as to define abrupt source and drain junctions in the semiconductor substrate, wherein dopant atoms from the doped RSD layer diffuse within the diffusion facilitation layer at a faster rate than with respect to the semiconductor substrate.

主权项

1. A field effect transistor (FET) device, comprising:
a diffusion facilitation layer formed on top of a semiconductor substrate; a doped, raised source/drain (RSD) layer formed on the diffusion facilitation layer; the diffusion facilitation layer having a portion thereof removed, corresponding to a region directly above a channel region of the FET device; and abrupt source and drain junctions defined in the semiconductor substrate, wherein the diffusion facilitation layer and the semiconductor substrate comprise materials such that dopant atoms from the doped RSD layer diffuse within the diffusion facilitation layer at a faster rate than with respect to the semiconductor substrate.