| 发明名称 |
OXIDE SEMICONDUCTOR DEPOSITING APPARATUS AND METHOD OF MANUFACTURING OXIDE SEMICONDUCTOR USING THE SAME |
| 摘要 |
An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate. |
| 申请公布号 |
US2015270118(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201414513463 |
申请日期 |
2014.10.14 |
| 申请人 |
Samsung Display Co., Ltd. |
发明人 |
KISHIMOTO Katsushi;MOON Yeon-Keon;SOHN Sang-Woo;FUKASAWA Takayuki;SHIN Sang-Won |
| 分类号 |
H01L21/02;C23C16/50;C23C16/46 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An oxide semiconductor depositing apparatus comprising:
a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and comprises:
a chamber body;a heater disposed in the chamber body, which is configured to heat the first substrate; anda cathode plate spaced apart from the heater and to which a high frequency voltage is applied; and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate. |
| 地址 |
Yongin-City KR |
