| 摘要 |
A semiconductor device is provided with a plurality of memory chains which each comprise a plurality of memory cells that are serially connected, wherein: the memory cells are storage elements that each perform rewriting using a cell transistor and current; the memory chain comprises a structure in which the storage elements are connected in parallel; the power supply voltage and the ground voltage are supplied from the outside; and voltage used for rewriting the storage elements is lower than the ground voltage. As a result, it is possible to achieve a semiconductor storage device of high reliability, and in addition, it is possible to achieve a semiconductor storage device which is of large capacity, which can perform reading and writing at high speed, and which can be manufactured at low cost. |
