| 摘要 |
<p>The present invention relates to a plasma processing apparatus capable of controlling electric field strength distribution of high-frequency consumed to generate plasma. According to the present invention, an electrode for generating plasma by high frequency energy, and used in a plasma etching device (10) for plasma processing of a wafer W, comprises: a substrate (105a) formed by metal; a first dielectric substance (105b) prepared in the center of a surface in a plasma side of the substrate (105a), and whose at least a part is exposed from the substrate (105a); and a first resistor (105b) prepared between plasma and the first dielectric substance (105b), and formed in a predetermined pattern by metal.</p> |
