METHOD FOR MANUFACTURING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE, AND APPARATUS FOR MANUFACTURING GROUP III NITRIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride crystal having a large size, less defects such as strain, dislocation and warp, and high quality by a vapor phase growth method.SOLUTION: A method for manufacturing a group III nitride crystal comprises: a first group III nitride crystal manufacturing step of manufacturing a first group III nitride crystal 1003 by a liquid phase growth method; and a second group III nitride crystal manufacturing step of manufacturing a second group III nitride crystal 1004 on the first crystal 1003 by a vapor phase growth method. The first group III nitride crystal manufacturing step comprises: contacting surfaces of a plurality of seed crystals 1003a of a group III nitride previously prepared with an alkali metal melt; reacting a group III element with nitrogen in the alkali metal melt under an atmosphere including the nitrogen; and bonding a plurality of group III nitride crystals by growing the plurality of group III nitride crystals from the plurality of seed crystals 1003a to form the first crystal 1003.