| 摘要 |
A light emitting diode structure includes a first type semiconductor layer, an illumination layer, a second type semiconductor layer, a plurality of first light extraction improvement structures and a transparent conductive layer. The illumination layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the illumination layer, and the refractive index thereof is n1. The first light extraction improvement structures are disposed on the second type semiconductor layer, and the refractive index thereof is n2. The first light extraction improvement structures are spatially separated from each other, and each of them includes a slanted light outgoing surface oblique to the upper surface of the second type semiconductor layer. The transparent conductive layer conformably covers the first light extraction improvement structures and the second type semiconductor layer, and the refractive index thereof is n3, wherein n2>n3. |
