SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A first waveguide member is formed, as viewed from above, in an image pickup region and a peripheral region of a semiconductor substrate. A part of the first waveguide member, which part is disposed in the peripheral region, is removed. A flattening step is then performed to flatten a surface of the first waveguide member on the side opposite to the semiconductor substrate.

主权项

1. A method of manufacturing a semiconductor device including a semiconductor substrate having a first region where a plurality of photoelectric conversion portions are disposed, and a second region where a circuit for processing signals from the plurality of photoelectric conversion portions is disposed, and
an insulator including a first part disposed on the first region and a second part disposed on the second region, the method comprising: a first step of forming a plurality of first openings in the first part of the insulator, wherein the plurality of first openings are respectively overlapped with the plurality of photoelectric conversion portions; a second step of, after the first step, forming a first member in each of the plurality of first openings and on the first and second parts of the insulator; a third step of at least partially removing a part of the first member, the part of the first member being disposed on the second part of the insulator, wherein the first member at least partially remains on the first part of the insulator after the third step; and a fourth step of, after the third step, forming a second member on the first member and planarizing the second member, resulting in one planar surface across a part of the second member on the first region and a part of the second member on the second region.