| 发明名称 |
VOLUMETRIC INTEGRATED CIRCUIT AND VOLUMETRIC INTEGRATED CIRCUIT MANUFACTURING METHOD |
| 摘要 |
A volumetric integrated circuit manufacturing method is provided. The method includes assembling a slab element of elongate chips, exposing a wiring layer between adjacent elongate chips of the slab element, metallizing a surface of the slab element at and around the exposed wiring layer to form a metallized surface electrically coupled to the wiring layer and passivating the metallized surface to hermetically seal the metallized surface. |
| 申请公布号 |
US2015270246(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201414221477 |
申请日期 |
2014.03.21 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Edelstein Daniel C.;Gaynes Michael A.;Shaw Thomas M.;Webb Bucknell C.;Yu Roy R. |
| 分类号 |
H01L25/065;H01L21/768;H01L23/29;H01L23/538;H01L23/31;H01L25/00;H01L21/56 |
主分类号 |
H01L25/065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A volumetric integrated circuit manufacturing method, comprising:
assembling a slab element of elongate chips; exposing a wiring layer between adjacent elongate chips of the slab element; metallizing a surface of the slab element at and around the exposed wiring layer to form a metallized surface electrically coupled to the wiring layer; and passivating the metallized surface to hermetically seal the metallized surface. |
| 地址 |
Armonk NY US |
