METHODS FOR PLASMA PROCESSING

摘要

Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.

主权项

1. A method for plasma-based coating of thin films on a substrate, said method comprising:
placing a substrate on a support within a chamber such that a side of said substrate to be coated faces at least one electrode of a plurality of electrodes within said chamber, and a minimum gap between said one electrode and said substrate is less than a width of said one electrode, wherein said chamber is connected to a vacuum pump, a gas pressure in said chamber is maintained in a range of 50 Pascals to 2000 Pascals, said plurality of electrodes within said chamber have lengths greater than their widths or heights, and said at least one electrode has a front side opposite said support for said substrate; maintaining a part of said substrate adjacent said support at a temperature less than 200° C.; providing AC power to at least a first electrode of said plurality of electrodes to form a plasma between said first electrode and a second electrode of said plurality of electrodes, and between said first electrode and said substrate providing ion bombardment of said substrate; and injecting a first gas into a space between opposing faces of said first and second electrodes to flow towards said substrate in the plasma between said first and second electrodes so that said gas deposits a thin film on said substrate as it flows adjacent said front side of said at least one electrode without recirculation.