| 发明名称 |
HIGH POWER AllnGaN BASED MULTI-CHIP LIGHT EMITTING DIODE |
| 摘要 |
A light emitting diode chip having a substantially transparent substrate and having an aspect ratio which defines an elongated geometry provides enhanced efficiency and brightness. Method for forming and operating the same are also disclosed. |
| 申请公布号 |
US2015270444(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201514631755 |
申请日期 |
2015.02.25 |
| 申请人 |
BRIDGELUX, INC. |
发明人 |
LIU Heng |
| 分类号 |
H01L33/32;H01L33/46;H01L33/38;H01L33/20 |
主分类号 |
H01L33/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting diode chip comprising a substantially transparent substrate and having an aspect ratio which defines an elongated geometry. |
| 地址 |
Livemore CA US |
