| 摘要 |
This semiconductor device is provided with: a collector region of a first conductivity type; a field stop region of a second conductivity type, which is arranged on the collector region; a drift region of the second conductivity type, which is arranged on the field stop region and has a lower impurity concentration than the field stop region; a base region of the first conductivity type, which is arranged on the drift region; and an emitter region of the second conductivity type, which is arranged on the base region. The impurity concentration gradient of the field stop region in the film thickness direction is larger in a region adjacent to the collector region than in a region adjacent to the drift region. |
