| 摘要 |
PROBLEM TO BE SOLVED: To inhibit current concentration caused by a carrier flowing out from a main region to a well layer in a semiconductor device including the well layer between the main region and a current sense region.SOLUTION: A semiconductor device disclosed in the present specification comprises: a well region having a well layer, which is arranged between a main region and a current sense region of a semiconductor substrate; and a well region electrode arranged above the well region, in which the well layer and the well region electrode are in contact with each other via a contact hole formed in an interlayer insulation film of the well region. With this configuration, when a carrier flows out from the main region to the well region, flowing-out carrier immediately exits to the well region electrode via the contact hole of the interlayer insulation film. Accordingly, current concentration does not occur in the semiconductor substrate and breakdown resistance at the time of avalanche breakdown or a short circuit can be improved. |
