PROGRAMMABLE VOLTAGE GENERATOR FOR NONVOLATILE MEMORY DEVICE

摘要

An exemplary embodiment of the present disclosure provides a programming voltage generator for a nonvolatile memory device. The programming voltage generator comprises a power circuit, a detector, a switching circuit, a control signal generator, and a regulation circuit. The power circuit outputs a programming voltage according to a voltage control signal. The detector detects whether the programming voltage is larger than or equal to a breakdown voltage of the nonvolatile memory device, so as to output an indication signal. The switching circuit temporally drops the programming voltage according to the indication signal. The control signal generator generates a plurality of regulation control signals. The regulation circuit generates the voltage control signal according to the programming signal and the regulation control signals.

主权项

1. A programming voltage generator for a nonvolatile memory device, comprising:
a power circuit, for outputting a programming voltage according to a voltage control signal; a detector, for detecting whether the programming voltage is larger than or equal to a breakdown voltage of the nonvolatile memory device, so as to output an indication signal; a switching circuit, for temporally dropping the programming voltage according to the indication signal; a control signal generator, for generating a plurality of regulation control signals; and a regulation circuit, for generating the voltage control signal according to the programming signal and the regulation control signals.