SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which an element formation region occupies less area and which uses a CMOS SGT.SOLUTION: A semiconductor device comprises: first and second columnar silicon layers 504, 505; a first gate insulation film 506 formed around the first columnar silicon layer; a first gate electrode 303 formed around the first gate insulation film; a second gate insulation film 506 formed around the second columnar silicon layer; a second gate electrode 304 formed around the second gate insulation film; first gate wiring 305 connected to the first and second gate electrodes; a first n-type diffusion layer 524 formed on an upper part of the first columnar silicon layer; a second n-type diffusion layer 502 formed on a lower part of the first columnar silicon layer; a first p-type diffusion layer 525 formed on an upper part of the second columnar silicon layer; and a second p-type diffusion layer 503 formed on a lower part of the second columnar silicon layer. A center line extending along the first gate wiring is off set by a first predetermined amount with respect to a line linking the center of the first columnar silicon layer and the center of the second columnar silicon layer.