发明名称 SEMICONDUCTOR DEVICE, DISPLAY DEVICE INCLUDING SEMICONDUCTOR DEVICE, DISPLAY MODULE INCLUDING DISPLAY DEVICE, AND ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND DISPLAY MODULE
摘要 A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.
申请公布号 US2015270403(A1) 申请公布日期 2015.09.24
申请号 US201514659792 申请日期 2015.03.17
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 KATAYAMA Masahiro;NAKAZAWA Yasutaka;YOKOYAMA Masatoshi;HAYAKAWA Masahiko;OKAZAKI Kenichi;KOSHIOKA Shunsuke
分类号 H01L29/786;H01L29/04;G09G5/00;H01L27/12;G06F3/047;H01L29/24;H01L29/45 主分类号 H01L29/786
代理机构 代理人
主权项 1. A semiconductor device comprising: a first conductive film; a first insulating film over the first conductive film; a second conductive film over the first insulating film; a second insulating film over the second conductive film; a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film; and a third insulating film over the third conductive film, wherein the third conductive film includes indium and oxygen, and wherein the third insulating film includes silicon and nitrogen, and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.
地址 Atsugi-shi JP