SEMICONDUCTOR STRUCTURE WITH A DOPED REGION BETWEEN TWO DEEP TRENCH ISOLATION STRUCTURES

摘要

The density of a transistor array is increased by forming one or more deep trench isolation structures in a semiconductor material. The deep trench isolation structures laterally surround the transistors in the array. The deep trench isolation structures limit the lateral diffusion of dopants and the lateral movement of charge carriers.

主权项

1. A transistor array comprising:
a semiconductor material having a first conductivity type; two or more transistor structures, each transistor structure having:
a source formed in the semiconductor material, the source having a second conductivity type;a drain formed in the semiconductor material, the drain being laterally spaced apart from the source, and having the second conductivity type;a shallow trench isolation structure formed in the semiconductor material, the shallow trench isolation structure touching the drain; and a deep isolation structure formed in the semiconductor material, the deep isolation structure laterally surrounding the source and the drain of a transistor structure in the array.