III-NITRIDE DEVICE AND METHOD HAVING A GATE ISOLATING STRUCTURE

摘要

A semiconductor device containing a GaN FET has an isolating gate structure outside the channel area which is operable to block current in the two-dimensional electron gas between two regions of the semiconductor device. The isolating gate structure is formed concurrently with the gate of the GaN FET, and has a same structure as the gate.

主权项

1. A semiconductor device, comprising:
a substrate comprising gallium nitride; an low-defect layer of gallium nitride disposed on said substrate; a barrier layer of aluminum gallium nitride disposed on said low-defect layer; a gallium nitride field effect transistor (GaN FET), comprising:
a gate disposed over said barrier layer;a drain contact disposed over said low-defect layer; anda source contact disposed over said low-defect layer; and a first gate isolating structure and a second gate isolating structure disposed over said barrier layer having a same structure as said gate, said first gate isolating structure being located between a first region of said semiconductor device and a second region of said semiconductor device and said second gate isolating structure being located between the first region of the semiconductor device and a third region of the semiconductor device, wherein said first gate isolating structure is contiguous with said gate and said second gate isolating structure is separate from said gate.