CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

摘要

A complementary metal-oxide-semiconductor (CMOS) image sensor includes a transfer gate formed on a substrate; a photo diode formed at or in a surface portion of the substrate on one side of the transfer gate, a floating diffusion region formed at or in a surface portion of the substrate on another side of the transfer gate, a first impurity region having a first conductive type formed at or in a surface portion of the substrate between the photo diode and the floating diffusion region, and a buried channel region having a second conductive type formed under the first impurity region.

主权项

1. A complementary metal-oxide-semiconductor (CMOS) image sensor comprising:
a transfer gate on a substrate; a photo diode at or in a surface portion of the substrate on one side of the transfer gate; a floating diffusion region at or in a surface portion of the substrate on another side of the transfer gate; a first impurity region having a first conductive type at or in a surface portion of the substrate between the photo diode and the floating diffusion region; and a buried channel region having a second conductive type under the first impurity region.