发明名称 THERMAL PROCESSING CHAMBER
摘要 Embodiments described herein provide a substrate processing apparatus that includes a vacuum chamber comprising a first dome and a second dome, a substrate support disposed inside the vacuum chamber between the first and second domes, a collimated energy source arranged in a compartmented housing and positioned proximate the second dome, wherein the second dome is between the collimated energy source and the substrate support. At least a portion of the second dome and the substrate support may be optically transparent to the collimated energy from the collimated energy source.
申请公布号 US2015267300(A1) 申请公布日期 2015.09.24
申请号 US201414219644 申请日期 2014.03.19
申请人 Applied Materials, Inc. 发明人 RANISH Joseph M.;HUNTER Aaron Muir
分类号 C23C16/52;C23C16/46;C23C16/44;C23C16/48 主分类号 C23C16/52
代理机构 代理人
主权项 1. A substrate processing apparatus, comprising: a vacuum chamber comprising a first dome and a second dome; a substrate support disposed inside the vacuum chamber between the first dome and the second dome and facing the first dome, wherein the substrate support is configured to support a substrate having a deposition surface; and a collimated energy source in a compartmented housing positioned proximate the second dome of the vacuum chamber, wherein at least a portion of the second dome and the substrate support are optically transparent to collimated energy from the collimated energy source.
地址 Santa Clara CA US