| 发明名称 |
CLEANING METHOD OF SILICON OXIDE FILM FORMING APPARATUS, SILICON OXIDE FILM FORMING METHOD, AND SILICON OXIDE FILM FORMING APPARATUS |
| 摘要 |
A cleaning method of a silicon oxide film forming apparatus for removing a deposit adhering to the inside of the silicon oxide film forming apparatus after a silicon oxide film is formed on a workpiece by supplying a process gas into a reaction chamber of the silicon oxide film forming apparatus. The cleaning method includes oxidizing the deposit adhering to the inside of the silicon oxide film forming apparatus by supplying an oxidizing gas into the reaction chamber, and cleaning the inside of the silicon oxide film forming apparatus by supplying a cleaning gas into the reaction chamber and removing the oxidized deposit. |
| 申请公布号 |
US2015267292(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201514662663 |
申请日期 |
2015.03.19 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KIM Cheoljung;IKEUCHI Toshiyuki;SHIMIZU Akira |
| 分类号 |
C23C16/44;C23C16/455;C23C16/40;C23C16/52 |
主分类号 |
C23C16/44 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A cleaning method of a silicon oxide film forming apparatus for removing a deposit adhering to the inside of the silicon oxide film forming apparatus after a silicon oxide film is formed on a workpiece by supplying a process gas into a reaction chamber of the silicon oxide film forming apparatus, comprising:
oxidizing the deposit adhering to the inside of the silicon oxide film forming apparatus by supplying an oxidizing gas into the reaction chamber; and cleaning the inside of the silicon oxide film forming apparatus by supplying a cleaning gas into the reaction chamber and removing the oxidized deposit. |
| 地址 |
Tokyo JP |
