| 摘要 |
<p>PROBLEM TO BE SOLVED: To perform etching of high anisotropy with small damage on the surface of an etched material, while ensuring a high surface accuracy, by performing the etching through chemical reaction of atoms or molecules of low energy contained in a cluster and the etched material.SOLUTION: A cluster is produced by aggregating atoms or molecules of a reaction gas capable of producing a metal complex by causing chemical reaction with an etched material. The cluster is supplied to the surface of the etched material without being ionized, thus enhancing the density of the atoms or molecules of the reaction gas on the surface. Under that state, the reaction gas and the etched material cause chemical reaction to produce a metal complex, thereby performing etching.</p> |
