发明名称 CLEANING METHOD OF PLASMA PROCESSING APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To provide a technique for removing the sediment containing a metal of small ionization tendency, produced in a capacitively coupled parallel plate plasma processing apparatus.SOLUTION: There is provided a method for removing sediment formed on an upper electrode. The sediment is produced by etching a metal layer containing a metal, by using plasma generated between the lower electrode and upper electrode of a lower structure in a plasma processing apparatus. A method MT1 of removing the sediment formed on the upper electrode performs a plurality of cycles, each including step ST12 for making ions collide against a first sediment on the upper electrode, and step ST13 for removing a second sediment produced by the above-mentioned step and formed on the lower structure.</p>
申请公布号 JP2015167155(A) 申请公布日期 2015.09.24
申请号 JP20140040524 申请日期 2014.03.03
申请人 TOKYO ELECTRON LTD 发明人 KISHI HIROKI;HASHIMOTO MITSURU;SHIMODA KEIICHI;NISHIMURA EIICHI;SHIMIZU AKITAKA
分类号 H01L21/3065;C23F4/00 主分类号 H01L21/3065
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