| 发明名称 |
LIGHT-EMITTING DEVICE |
| 摘要 |
The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive InxAlyGa(1-x-y)N (0<x<1, 0<y<1) layer having a second concentration and a second conductive AlzGa(1-z)N (0<z<1) layer having a third concentration on the active layer. |
| 申请公布号 |
US2015270436(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201314434383 |
申请日期 |
2013.10.08 |
| 申请人 |
LG Innotek Co., Ltd. |
发明人 |
Han Dae Seob;Moon Yong Tae;Baek Kwang Sun;Cho A Ra |
| 分类号 |
H01L33/06;H01L33/00;H01L33/14;H01L33/32 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light-emitting device comprising:
a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer, wherein the second conductive gallium nitride-based layer comprises a second conductive GaN layer having a first concentration, a second conductive InxAlyGa(1-x-y)N (0<x<1, 0<y<1) layer having a second concentration and a second conductive AlzGa(1-z)N (0<z<1) layer having a third concentration on the active layer, and wherein the second conductive AlzGa(1-z)N layer having the third concentration comprises: a primary second conductive AlzGa(1-z)N layer having the third concentration, which has an energy bandgap equal to or higher than an energy bandgap of a quantum wall of the active layer and in which the energy bandgap is gradually decreased from the active layer to the second semiconductor layer; and a secondary second conductive AlzGa(1-z)N layer having the third concentration, which has an energy bandgap equal to or higher than an energy bandgap of the quantum wall on the primary second conductive AlzGa(1-z)N layer having the third concentration, and in which the energy bandgap is gradually increased. |
| 地址 |
Seoul KR |
