| 发明名称 |
Semiconductor Device And Method for Producing the Same |
| 摘要 |
A semiconductor device includes, on one semiconductor substrate: a first element isolation region having a first width, wherein a liner oxide film, a liner nitride film and a silicon dioxide film are provided in succession from an outer peripheral side of an upper surface of the first element isolation region; and a second element isolation region having a second width that is larger than the first width, wherein a liner oxide film and a silicon dioxide film are provided in succession from an outer peripheral side of an upper surface of the second element isolation region. |
| 申请公布号 |
US2015270337(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201314426143 |
申请日期 |
2013.09.03 |
| 申请人 |
PS4 Luxco S.a.r.l. |
发明人 |
Ujihara Shingo;Taniguchi Koji |
| 分类号 |
H01L29/06;H01L21/762 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising, on one semiconductor substrate:
a first element isolation region having a first width, wherein a liner oxide film, a liner nitride film and a silicon dioxide film are provided in succession from an outer peripheral side of an upper surface of said first element isolation region; and a second element isolation region having a second width that is larger than the first width, wherein a liner oxide film and a silicon dioxide film are provided in succession from an outer peripheral side of an upper surface of said second element isolation region. |
| 地址 |
Luxembourg LU |
