| 发明名称 |
SOLID-STATE IMAGING DEVICE |
| 摘要 |
According to one embodiment, a solid-state imaging device includes: a first inorganic photoelectric converter; a semiconductor substrate that includes a light-receiving face to which light is to be incident and a circuit-formed surface on which a circuit including a readout circuit is formed, the light-receiving face facing the first inorganic photoelectric converter, the semiconductor substrate including a second inorganic photoelectric converter thereinside; and a first part including a microstructure arranged between the first inorganic photoelectric converter and the second inorganic photoelectric converter. |
| 申请公布号 |
US2015270314(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201414555889 |
申请日期 |
2014.11.28 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
MIYAZAKI Takashi;FUJIWARA Ikuo;FUNAKI Hideyuki |
| 分类号 |
H01L27/30;H01L31/0376;H01L27/146 |
主分类号 |
H01L27/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A solid-state imaging device comprising:
a first inorganic photoelectric converter; a semiconductor substrate that includes: a light-receiving face to which light is to be incident; and a circuit-formed surface on which a circuit comprising a readout circuit is formed, the light-receiving face facing the first inorganic photoelectric converter, the semiconductor substrate including a second inorganic photoelectric converter thereinside; and a first part comprising a microstructure arranged between the first inorganic photoelectric converter and the second inorganic photoelectric converter. |
| 地址 |
Minato-ku JP |
