发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other. |
申请公布号 |
US2015270295(A1) |
申请公布日期 |
2015.09.24 |
申请号 |
US201514730436 |
申请日期 |
2015.06.04 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI Shunpei;KOYAMA Jun;KATO Kiyoshi |
分类号 |
H01L27/12;H01L27/115;H01L27/11;H01L27/108;H01L29/786;H01L29/24 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |