SEMICONDUCTOR DEVICE

摘要

Provided is a highly integrated semiconductor device, a semiconductor device with large storage capacity with respect to an area occupied by a capacitor, a semiconductor device capable of high-speed writing, a semiconductor device capable of high-speed reading, a semiconductor device with low power consumption, or a highly reliable semiconductor device. The semiconductor device includes a first transistor, a second transistor, and a capacitor. A conductor penetrates and connects the first transistor, the capacitor, and the second transistor. An insulator is provided on a side surface of the conductor that penetrates the capacitor.

主权项

1. A semiconductor device comprising:
a first transistor, the first transistor comprising:
a first semiconductor;a first insulator; anda first conductor; a second insulator over the first transistor; a capacitor over the second insulator, the capacitor comprising:
a second conductor;a third conductor; anda third insulator; a fourth insulator over the capacitor; and a second transistor over the fourth insulator, the second transistor comprising:
a second semiconductor;a fifth insulator; anda fourth conductor, wherein a part of the first conductor overlaps with the first semiconductor with the first insulator interposed therebetween, wherein a part of the fourth conductor overlaps with the second semiconductor with the fifth insulator interposed therebetween, wherein a part of the second conductor faces the third conductor with the third insulator interposed therebetween, wherein the second conductor is electrically connected to the first conductor through a first opening in the second insulator, and wherein the second conductor is electrically connected to the second semiconductor through a second opening in the fourth insulator.