FLASH MEMORY DEVICE AND RELATED MANUFACTURING METHOD

摘要

A method for manufacturing a memory device may include obtaining a substrate structure that includes a substrate, an oxide material layer positioned on the substrate, a polysilicon material layer positioned on the oxide material layer, a first control gate and a second control gate positioned on the polysilicon material layer, and an offset oxide layer positioned between the first control gate and the second control gate. The method may further include the following steps: removing, using the offset oxide layer as a first mask, a portion of the polysilicon material layer for forming a polysilicon structure that includes a first step structure; forming a masking oxide layer on the offset oxide layer; removing, using the masking oxide layer as a second mask, a portion of the polysilicon structure for forming a floating gate polysilicon member that includes the first step structure and a second step structure.

主权项

1. A method for manufacturing a memory device, the method comprising:
obtaining a silicon substrate structure, wherein the silicon substrate structure includes a substrate, a floating gate oxide material layer positioned on the substrate, a floating gate polysilicon material layer positioned on the floating gate oxide material layer, a first control gate and a second control gate that are positioned on the floating gate polysilicon material layer, a first control gate sidewall layer and a second control gate sidewall layer that are respectively positioned on two opposite sides of the first control gate, and a control gate offset oxide layer that is positioned on the first control gate sidewall layer and positioned between the first control gate sidewall layer and the second control gate; removing, using the control gate offset oxide layer as a first mask, a portion of the floating gate polysilicon material layer for forming a floating gate polysilicon structure that includes a first step structure; forming a masking oxide layer on the control gate offset oxide layer, such that the masking oxide layer is positioned between the control gate offset oxide layer and the second control gate; removing, using the masking oxide layer as a second mask, a portion of the floating gate polysilicon structure for forming a floating gate polysilicon member that includes the first step structure and a second step structure; and providing a first polysilicon material set between the first control gate and the second control gate for forming an erase gate.