| 摘要 |
This resist-layer-equipped blank (10) is provided with a resist layer (7) which is formed upon a substrate (1), and which is configured from a positive resist material. The thickness of the resist layer (7) is not more than 200 nm. The rate of dissolution of an unexposed section of the resist layer (7) with respect to an aqueous developing solution is not more than 0.05 nm/sec. A development-acceleration layer (9), which serves to cause the aqueous development solution to spread all over at least an exposed section of the resist layer (7), is formed upon the resist layer (7). The water contact angle at the surface of the unexposed section of the resist layer may be 66˚ or greater. |
