发明名称 基板処理装置及び半導体装置の製造方法
摘要 PROBLEM TO BE SOLVED: To reduce foreign objects in a processing chamber thereby improving the quality of substrate processing and the production yield.SOLUTION: A substrate processing apparatus includes: a processing chamber where a substrate is processed; a substrate holder holding the substrate and transported to the interior and the exterior of the processing chamber; a transfer chamber where the substrate is loaded to the substrate holder or the substrate is unloaded from the substrate holder; an inactive gas supply mechanism including a nozzle jetting an inactive gas to the substrate holder in the transfer chamber; and a control part controlling the inactive gas supply mechanism so that the inactive gas is jetted from the nozzle to the substrate holder transported from the processing chamber to the transfer chamber and from which the substrate is unloaded. The nozzle jets the inactive gas from the upper side to the down side forming a certain angle.
申请公布号 JP5785062(B2) 申请公布日期 2015.09.24
申请号 JP20110249775 申请日期 2011.11.15
申请人 株式会社日立国際電気 发明人 泉 学
分类号 H01L21/205;C23C16/44;C23C16/455;H01L21/22;H01L21/677 主分类号 H01L21/205
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