METHOD OF PROGRAMMING MEMORY DEVICE AND METHOD OF READING DATA OF MEMORY DEVICE INCLUDING THE SAME

摘要

A method of programming target memory cells of a nonvolatile memory device includes; programming the target memory cells using an incrementally adjusted program time, reading a code word stored by the target memory cells and determining a bit error rate (BER) associated with the target memory cells in view of the read code word, and if the BER exceeds an upper BER limit, increasing the program time by a unit time.

主权项

1. A method of programming target memory cells of a nonvolatile memory device, the method comprising:
programming the target memory cells to at least one state corresponding to received write data, wherein once programmed to the target memory cells the write data defines program data; providing an error-check result based at least in part on a code-word read from the target memory cells as program data; and controlling a program time for a program operation subsequently used to program the target memory cells based on the error-check result.