| 发明名称 |
ESD PROTECTION CIRCUIT WITH PLURAL AVALANCHE DIODES |
| 摘要 |
An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes (308-316) has a first terminal coupled to the base and a second terminal coupled to the collector. The collector is connected to a first terminal (V+). The emitter is connected to a first power supply terminal (V−). |
| 申请公布号 |
US2015270708(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201414222850 |
申请日期 |
2014.03.24 |
| 申请人 |
Texas Instruments Incorporated |
发明人 |
Edwards Henry L.;Salman Akram A.;Yu Lili |
| 分类号 |
H02H9/04;H01L21/8222 |
主分类号 |
H02H9/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electrostatic discharge (ESD) protection circuit, comprising:
a bipolar transistor having a base, collector, and emitter; a first diode coupled between the base and the collector of the bipolar transistor, the first diode having a first avalanche threshold; a second diode coupled between the base and the collector of the bipolar transistor, the second diode positioned farther away from the bipolar transistor than the first diode, and the second diode having a second avalanche threshold lower than the first avalanche threshold; a first terminal connected to the collector; and a power supply terminal connected to the emitter. |
| 地址 |
Dallas TX US |
