发明名称 IN-LINE GERMANIUM AVALANCHE PHOTODETECTOR
摘要 A method for manufacturing a photodetector including growing a quantity of germanium within an optical pathway of a waveguide. The detection of a current caused by an interaction between the optical signal and the germanium is used to indicate the presence of an optical signal passing through the waveguide.
申请公布号 US2015270414(A1) 申请公布日期 2015.09.24
申请号 US201514730932 申请日期 2015.06.04
申请人 BAE Systems Information and Electronic Systems Integration Inc. 发明人 POMERENE Andrew TS;VU Vu A.;KAMOCSAI Robert L.
分类号 H01L31/0232;H01L31/109;H01L31/18 主分类号 H01L31/0232
代理机构 代理人
主权项 1. A method for manufacturing a photodetector comprising: creating a silicon waveguide; creating an N-type implant region adjacent to the waveguide: creating a P-type implant region adjacent to-the waveguide; growing a layer of germanium in the waveguide wherein an optical signal interacts with the layer of germanium and continues to travel through the waveguide; and installing a plurality of electrical connections to the N-type implant region and the P-type implant region.
地址 Nashua NH US