DIELECTRIC LINER FOR A SELF-ALIGNED CONTACT VIA STRUCTURE

摘要

At least one dielectric material layer having a top surface above the topmost surface of the gate electrode of a field effect transistor is formed. Active region contact via structures are formed through the at least one dielectric material layer to the source region and the drain region. A self-aligned gate contact cavity is formed over the gate electrode such that at least one sidewall of the gate contact cavity is a sidewall of the active region contact via structures. A dielectric spacer is formed at the periphery of the gate contact cavity by deposition of a dielectric liner and an anisotropic etch. A conductive material is deposited in the gate contact cavity and planarized to form a self-aligned gate contact via structure that is electrically isolated from the active region contact via structures by the dielectric spacer.

主权项

1. A method of forming a semiconductor structure comprising:
forming a semiconductor material portion including a doped semiconductor region on a substrate; forming a conductive material portion above said semiconductor material portion; forming at least one dielectric material layer over said semiconductor material portion; forming a first contact via structure through said at least one dielectric material layer, said first contact via structure being electrically shorted to said doped semiconductor region; forming a cavity overlying said conductive material portion through said at least one dielectric material layer; forming a dielectric spacer on sidewalls of said cavity; and forming a second contact via structure in said cavity and directly on said conductive material portion.