FABRICATION OF GRAPHENE ELECTRODES ON DIAMOND SUBSTRATE

摘要

One or more graphene layers may be formed on a diamond substrate by reforming sp3 hybrid orbitals of C—C bonds in a portion of the diamond substrate into sp2 hybrid orbitals. Forming sp2 hybrid orbitals may be achieved by ion bombardment to damage the sp3 hybrid orbitals of the C—C bonds in the diamond substrate and subsequent heating of the diamond substrate to allow annealing to take place. If more than ten graphene layers are formed on the diamond substrate, the graphene layers may be reduced to ten or less graphene layers. Removal of the graphene layers may be performed by peeling a desired number of layers using an adhesive material.

主权项

1. A method of forming graphene on a diamond substrate, comprising:
treating a portion of the diamond substrate by ion bombardment, the ion bombardment damaging sp3 bonds of the carbon atoms in the treated substrate portion; heating the diamond substrate at an annealing temperature to permit annealing to occur in the treated portion of the diamond substrate, whereby the treated portion of the diamond substrate is transformed into one or more graphene layers; and reducing one or more of the graphene layers to ten or less graphene layers if the number of graphene layers formed exceeds ten.