| 发明名称 |
SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE SIGE/SI FIN STRUCTURE |
| 摘要 |
A semiconductor device includes a semiconductor-on-insulator substrate having an insulator layer, and at least one silicon germanium (SiGe) fin having a superlattice structure. The SiGe fin is formed on an upper surface of the insulator layer. A gate stack is formed on an upper surface of the at least one silicon germanium fin. The gate stack includes first and second opposing spacers defining a gate length therebetween. First and second epitaxial source/drain structures are formed on the insulator layer. The first and second epitaxial source/drain structures extend beneath the spacer to define a silicon germanium gate channel beneath the gate stack. |
| 申请公布号 |
US2015270348(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201514732931 |
申请日期 |
2015.06.08 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Basker Veeraraghavan S.;Yamashita Tenko;Yeh Chun-chen |
| 分类号 |
H01L29/15;H01L29/49;H01L29/51;H01L29/78 |
主分类号 |
H01L29/15 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor-on-insulator substrate including an insulator layer; at least one fin having a superlattice structure, the at least one fin formed on an upper surface of the insulator layer; a gate stack formed on an upper surface of the at least one fin, the gate stack including first and second opposing spacers defining a gate length therebetween; and first and second epitaxial source/drain structures formed on the insulator layer and extending beneath the spacer to define a superlattice gate channel beneath the gate stack. |
| 地址 |
Armonk NY US |
