| 发明名称 |
CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A complementary metal-oxide-semiconductor (CMOS) image sensor includes a substrate including a photodiode, a transistor on the substrate; a first insulating layer on the substrate; a contact connected to the transistor and passing through the first insulating layer; an etch stop layer on the first insulating layer; a second insulating layer on the etch stop layer; and a signal line extending through the etch stop layer and the second insulating layer, on the first insulating layer and connected to the contact. |
| 申请公布号 |
US2015270308(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201414453028 |
申请日期 |
2014.08.06 |
| 申请人 |
CHOI Sun |
发明人 |
CHOI Sun |
| 分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A complementary metal-oxide-semiconductor (CMOS) image sensor comprising:
a substrate including a photodiode; a transistor on the substrate; a first insulating layer on the substrate; a contact connected to the transistor and passing through the first insulating layer; an etch stop layer on the first insulating layer; a second insulating layer on the etch stop layer; and a signal line extending through the etch stop layer and the second insulating layer, on the first insulating layer and connected to the contact. |
| 地址 |
Icheon-si KR |
