发明名称 SEMICONDUCTOR DEVICE, IMAGING DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 A semiconductor device manufacturing method includes a wafer stack manufacturing process and a dicing process. The wafer stack manufacturing process includes: a first wafer manufacturing process of manufacturing a resin film covering circuits and heated to a temperature higher than a glass transition point of the resin film, manufacturing first holes extending from a surface of the resin film to wirings of the circuits, and providing electrodes electrically connected to the wirings in the first holes to form a first wafer; a second wafer manufacturing process of manufacturing a resin film covering circuits and heated to a temperature lower than a glass transition point of the resin film, manufacturing second holes extending from a surface of the resin film to wirings of the circuits, and providing the electrodes electrically connected to the wirings in the second holes to form a second wafer; and a wafer bonding process.
申请公布号 US2015270304(A1) 申请公布日期 2015.09.24
申请号 US201514734240 申请日期 2015.06.09
申请人 OLYMPUS CORPORATION 发明人 Saito Haruhisa
分类号 H01L27/146;H01L25/065;H01L21/78;H01L23/00;H01L25/00 主分类号 H01L27/146
代理机构 代理人
主权项 1. A semiconductor device manufacturing method comprising: a wafer stack manufacturing process of manufacturing a wafer stack in which a plurality of wafers comprising circuits and electrodes electrically connected to the circuits are stacked; and a dicing process of dicing the wafer stack, wherein the wafer stack manufacturing process comprises: a first wafer manufacturing process of manufacturing a resin film covering the plurality of circuits and heated to a temperature higher than a glass transition point of the resin film, manufacturing first holes extending from a surface of the resin film to wirings of the circuits, and providing the electrodes electrically connected to the wirings in the first holes to form a first wafer; a second wafer manufacturing process of manufacturing a resin film covering the plurality of circuits and heated to a temperature lower than a glass transition point of the resin film, manufacturing second holes extending from a surface of the resin film to wirings of the circuits, and providing the electrodes electrically connected to the wirings in the second holes to form a second wafer; and a wafer bonding process of causing respective electrode sides of the first wafer and the second wafer to be opposite to each other, bonding the respective resin films together by heating the resin film of the second wafer to a temperature higher than the glass transition point, and bonding the respective electrodes together to form a stack of the first wafer and the second wafer constituting at least a part of the wafer stack.
地址 Tokyo JP