发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A method of manufacturing a semiconductor device, includes providing a multi-chip interconnection substrate having an upper surface and a lower surface, providing a semiconductor chip having a main surface and a back surface, making the back surface of the semiconductor chip and the upper surface of the multi-chip interconnection substrate face each other and mounting the semiconductor chips in the chip mounting areas of the multi-chip interconnection substrate through a bonding adhesive, coupling the electrode pads formed on the main surface of each of the semiconductor chips with the bonding pads formed on the upper surface of the multi-chip interconnection substrate by the conductive wires respectively, forming a resin sealing body by resin-sealing the semiconductor chips, the conductive wires, and the upper surface of the multi-chip interconnection substrate, and forming a plurality of solder balls to be coupled to a plurality of bump lands formed on the lower surface of the multi-chip interconnection substrate.
申请公布号 US2015270244(A1) 申请公布日期 2015.09.24
申请号 US201514733835 申请日期 2015.06.08
申请人 Renesas Electronics Corporation 发明人 NAKAYAMA Sadao;MATSUURA Yoshihiro
分类号 H01L23/00;H01L21/48;H01L21/56 主分类号 H01L23/00
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device, the method comprising: providing a multi-chip interconnection substrate having an upper surface and a lower surface opposite to the upper surface in which a shape of a plane intersecting a thickness direction thereof is a quadrangle having two opposite long sides and two opposite short sides and a plurality of chip mounting areas are provided; providing a semiconductor chip having a main surface and a back surface opposite to the main surface in which a shape of a plane intersecting a thickness direction thereof is a quadrangle having two opposite long sides and two opposite short sides; making the back surface of the semiconductor chip and the upper surface of the multi-chip interconnection substrate face each other and mounting the semiconductor chips in the chip mounting areas of the multi-chip interconnection substrate through a bonding adhesive; coupling the electrode pads formed on the main surface of each of the semiconductor chips with the bonding pads formed on the upper surface of the multi-chip interconnection substrate by the conductive wires respectively; forming a resin sealing body by resin-sealing the semiconductor chips, the conductive wires, and the upper surface of the multi-chip interconnection substrate; and forming a plurality of solder balls to be coupled to a plurality of bump lands formed on the lower surface of the multi-chip interconnection substrate, wherein the mounting of the semiconductor chips comprises mounting the semiconductor chips in a way that the long sides of the semiconductor chips are parallel to the short sides of the multi-chip interconnection substrate.
地址 Kawasaki-shi JP