发明名称 SEMICONDUCTOR DEVICE
摘要 An electrode includes an extending portion extending such that both ends thereof get into a first recessed portion and a second recessed portion provided in a first inner wall and a second inner wall, respectively, facing each other in a lateral direction of a case. The extent to which both the ends of the extending portion get into is set such that positions of both the ends thereof in a case where both the ends are narrowed toward a midpoint therebetween to reduce a length of the extending portion to 70% of the length of the extending portion exist between positions of the first and second inner walls in a case where the first and second inner walls are each narrowed toward a midpoint therebetween by 10% of the distance between the first and second inner walls.
申请公布号 US2015270186(A1) 申请公布日期 2015.09.24
申请号 US201414566503 申请日期 2014.12.10
申请人 Mitsubishi Electric Corporation 发明人 MIYAZAWA Masaomi;TABATA Mituharu;TAKAHASHI Takuya
分类号 H01L23/053;H01L23/16 主分类号 H01L23/053
代理机构 代理人
主权项 1. A semiconductor device, comprising: a substrate on which a semiconductor element is mounted; an electrode that is electrically connected to said semiconductor element; and a case that covers said substrate and a remaining portion except for an upper portion of said electrode, wherein said remaining portion of said electrode includes an extending portion extending such that both ends thereof get into a first recessed portion and a second recessed portion provided in a first inner wall and a second inner wall, respectively, facing each other in a lateral direction of said case, and the extent to which said both ends of said extending portion get into is set such that positions of said both ends thereof in a case where said both ends are narrowed toward a midpoint therebetween to reduce a length of said extending portion to 70% of the length of said extending portion exist between positions of said first and second inner walls in a case where said first and second inner walls are each narrowed toward a midpoint therebetween by 10% of the distance between said first and second inner walls.
地址 Tokyo JP