发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
An electrode includes an extending portion extending such that both ends thereof get into a first recessed portion and a second recessed portion provided in a first inner wall and a second inner wall, respectively, facing each other in a lateral direction of a case. The extent to which both the ends of the extending portion get into is set such that positions of both the ends thereof in a case where both the ends are narrowed toward a midpoint therebetween to reduce a length of the extending portion to 70% of the length of the extending portion exist between positions of the first and second inner walls in a case where the first and second inner walls are each narrowed toward a midpoint therebetween by 10% of the distance between the first and second inner walls. |
申请公布号 |
US2015270186(A1) |
申请公布日期 |
2015.09.24 |
申请号 |
US201414566503 |
申请日期 |
2014.12.10 |
申请人 |
Mitsubishi Electric Corporation |
发明人 |
MIYAZAWA Masaomi;TABATA Mituharu;TAKAHASHI Takuya |
分类号 |
H01L23/053;H01L23/16 |
主分类号 |
H01L23/053 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a substrate on which a semiconductor element is mounted; an electrode that is electrically connected to said semiconductor element; and a case that covers said substrate and a remaining portion except for an upper portion of said electrode, wherein said remaining portion of said electrode includes an extending portion extending such that both ends thereof get into a first recessed portion and a second recessed portion provided in a first inner wall and a second inner wall, respectively, facing each other in a lateral direction of said case, and the extent to which said both ends of said extending portion get into is set such that positions of said both ends thereof in a case where said both ends are narrowed toward a midpoint therebetween to reduce a length of said extending portion to 70% of the length of said extending portion exist between positions of said first and second inner walls in a case where said first and second inner walls are each narrowed toward a midpoint therebetween by 10% of the distance between said first and second inner walls. |
地址 |
Tokyo JP |