发明名称 APPARATUS AND METHOD FOR MANUFACTURING SINGLE CRYSTAL
摘要 <p>PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a single crystal, capable of improving the quality of the single crystal by growing the single crystal in stable temperature conditions.SOLUTION: An apparatus 1 for manufacturing a single crystal comprises: a crucible 10 for storing a raw material 2; a heat insulator 20 having at least a heat insulating base material 21 for covering the crucible 10; a crystal growth furnace 30 housing the crucible 10 and the heat insulator 20; and an induction coil 60 provided outside the crystal growth furnace 30 and for induction-heating the crucible 10. The heat insulator 20 having electrical insulation has further a high melting point insulation layer 22 coating the heat insulating base material 21, and the high melting point insulation layer 22 coats at least a part of the heat insulating base material 21. The melting point of a material forming the high melting point insulation layer 22 is relatively higher than the sublimation temperature of the raw material 2.</p>
申请公布号 JP2015166298(A) 申请公布日期 2015.09.24
申请号 JP20140041397 申请日期 2014.03.04
申请人 FUJIKURA LTD 发明人 HATADA SHINJI
分类号 C30B23/06;C30B29/38 主分类号 C30B23/06
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