| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF |
| 摘要 |
A semiconductor device includes bit lines provided in a semiconductor substrate; an ONO film that is provided along the surface of the semiconductor substrate and is made of a tunnel oxide film, a trap layer, and a top oxide film; and an oxide film that is provided on the surface of the semiconductor substrate in the middle between the bit lines and contacts the side face of the ONO film, in which the film thickness of the oxide film is larger than the sum of the thicknesses of the tunnel oxide film and the top oxide film, and smaller than the thickness of the ONO film. |
| 申请公布号 |
US2015270278(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201514628939 |
申请日期 |
2015.02.23 |
| 申请人 |
SPANSION LLC |
发明人 |
HAYAKAWA Yukio;UTSUNO Yukihiro |
| 分类号 |
H01L27/115;H01L21/28;H01L23/528;H01L21/311;H01L21/768;H01L29/51;H01L21/02 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device, comprising:
forming a bit line in a semiconductor substrate; forming along a surface of the semiconductor substrate an oxide-nitride-oxide (ONO) film that includes a tunnel oxide film, a trap layer made of a nitride film, and a top oxide film; etching the top oxide film in a middle portion between the bit lines along the surface of the semiconductor substrate; and oxidizing the trap layer under a portion where the top oxide film is etched. |
| 地址 |
Sunnyvale CA US |
