| 发明名称 |
Method and Apparatus for Plasma Dicing a Semi-conductor Wafer |
| 摘要 |
The present invention provides a method for plasma dicing a substrate. The method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a carrier support to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma. |
| 申请公布号 |
US2015270154(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201514728517 |
申请日期 |
2015.06.02 |
| 申请人 |
Plasma-Therm LLC |
发明人 |
Gauldin Rich;Geerpuram Dwarakanath;Mackenzie Ken;Lazerand Thierry;Pays-Volard David;Martinez Linnell;Westerman Russell;Grivna Gordon M.;Doub Jason |
| 分类号 |
H01L21/683;H01L21/78 |
主分类号 |
H01L21/683 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for plasma processing a substrate, the method comprising:
providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma while the support film is exposed to the generated plasma. |
| 地址 |
St. Petersburg FL US |
