PATTERNING METHOD FOR SEMICONDUCTOR DEVICE FABRICATION

摘要

A method includes forming a first pattern having a first feature of a first material on a semiconductor substrate. A second pattern with a second feature and third feature of a second material, interposed by the first feature, is formed on the semiconductor substrate. Spacer elements then are formed on sidewalls of the first feature, the second feature, and the third feature. After forming the spacer elements, the second material comprising the second and third features is selectively removed to form a first opening and a second opening. The first feature, the first opening and the second opening are used as a masking element to etch the target layer.

主权项

1. A method of patterning a semiconductor device, comprising:
forming a first pattern, wherein the first pattern includes a first feature of a first material disposed over a semiconductor substrate having a target layer; forming a second pattern of a second material different from the first material, wherein the second pattern includes a second feature and a third feature disposed over the semiconductor substrate, wherein the first feature interposes the second and third features in a first dimension; forming spacer elements on sidewalls of the first feature, the second feature, and the third feature; after forming the spacer elements, selectively removing the second material of the second and third features to form a first opening and a second opening, wherein sidewalls of the first and second openings are defined by the spacer elements; and using the first feature, first opening and the second opening as a masking element to etch the target layer.