| 发明名称 |
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND FERROELECTRIC FILM |
| 摘要 |
A semiconductor device in one embodiment contains a first conductive layer, a second conductive layer, and a hafnium-oxide ferroelectric film that is provided between the first and second conductive layers and contains a total of at least 98 at.% hafnium (Hf) and oxygen (O). |
| 申请公布号 |
WO2015141626(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
WO2015JP57696 |
申请日期 |
2015.03.16 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
INO, TSUNEHIRO;FUJII, SHOSUKE;INUMIYA, SEIJI |
| 分类号 |
H01L21/8246;H01L27/105 |
主分类号 |
H01L21/8246 |
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