| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a novel structure, in which variation in threshold voltage of a memory cell after writing is suppressed to reduce operation voltage or to increase memory capacity.SOLUTION: A semiconductor device comprises: a plurality of memory cells each including a transistor formed using an oxide semiconductor and a transistor formed using a material other than the oxide semiconductor; a driving circuit for driving the plurality of memory cells; and a potential generation circuit for generating a plurality of potentials to be supplied to the driving circuit. The driving circuit includes: a data buffer; a writing circuit for writing, as data, any one of the plurality of potentials to each of the memory cells; a readout circuit for reading out the data written in the memory cells; and a verification circuit for verifying whether the readout data matches the data held by the data buffer. |
