发明名称 Method of Fabricating an Integrated Circuit with Enhanced Defect Repairability
摘要 The present disclosure provides one embodiment of a method for extreme ultraviolet lithography (EUVL) process. The method includes loading a mask to a lithography system. The mask includes defect-repaired regions and defines an integrated circuit (IC) pattern thereon. The method also includes setting an illuminator of the lithography system in an illumination mode according to the IC pattern, configuring a pupil filter in the lithography system according to the illumination mode and performing a lithography exposure process to a target with the mask and the pupil filter by the lithography system in the illumination mode.
申请公布号 US2015268561(A1) 申请公布日期 2015.09.24
申请号 US201414221362 申请日期 2014.03.21
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 LU YEN-CHENG;YU SHINN-SHENG;CHEN JENG-HORNG;YEN ANTHONY
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. A method for extreme ultraviolet lithography (EUVL), comprising: loading a mask to a lithography system, wherein the mask includes: a reflective region;an opaque region;a defect-repaired region over a defect in the reflective region; andan absorption-layer-absent (ALA) region in the opaque region; configuring a pupil filter in the lithography system according to an illumination mode; and performing a lithography exposure process to a target with the mask and the pupil filter by the lithography system in the illumination mode, wherein the pupil filter block an amount of reflection light, reflected from the mask, to exposure the target.
地址 Hsin-Chu TW