发明名称 |
POWER AMPLIFICATION CIRCUIT AND TRANSMITTER |
摘要 |
A power amplification circuit capable of improving low-frequency resonance frequency and having a more flexible design; the power amplification circuit comprises a power amplification die, a first metal oxide semiconductor capacitor (Moscap1), a direct current decoupling capacitor (CLF) and an output matching network; the drain electrode of the power amplification die is connected to the first end of the first metal oxide semiconductor capacitor (Moscap1) via a bonding wire (LB1); the second end of the first metal oxide semiconductor capacitor (Moscap1) is grounded; the drain electrode of the power amplification die is directly connected to the output matching network via a bonding wire (LB2); the source electrode of the power amplification die is grounded; the first end of the first metal oxide semiconductor capacitor (Moscap1) is connected to one end of the direct current decoupling capacitor (CLF) via a bonding wire (LB3); and the other end of the direct current decoupling capacitor (CLF) is grounded. |
申请公布号 |
WO2015139311(A1) |
申请公布日期 |
2015.09.24 |
申请号 |
WO2014CN73883 |
申请日期 |
2014.03.21 |
申请人 |
HUAWEI TECHNOLOGIES CO., LTD. |
发明人 |
ZHANG, XIAOMIN;HUANG, AN;JIAO, LIUYAN |
分类号 |
H03F1/32 |
主分类号 |
H03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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