发明名称 POWER AMPLIFICATION CIRCUIT AND TRANSMITTER
摘要 A power amplification circuit capable of improving low-frequency resonance frequency and having a more flexible design; the power amplification circuit comprises a power amplification die, a first metal oxide semiconductor capacitor (Moscap1), a direct current decoupling capacitor (CLF) and an output matching network; the drain electrode of the power amplification die is connected to the first end of the first metal oxide semiconductor capacitor (Moscap1) via a bonding wire (LB1); the second end of the first metal oxide semiconductor capacitor (Moscap1) is grounded; the drain electrode of the power amplification die is directly connected to the output matching network via a bonding wire (LB2); the source electrode of the power amplification die is grounded; the first end of the first metal oxide semiconductor capacitor (Moscap1) is connected to one end of the direct current decoupling capacitor (CLF) via a bonding wire (LB3); and the other end of the direct current decoupling capacitor (CLF) is grounded.
申请公布号 WO2015139311(A1) 申请公布日期 2015.09.24
申请号 WO2014CN73883 申请日期 2014.03.21
申请人 HUAWEI TECHNOLOGIES CO., LTD. 发明人 ZHANG, XIAOMIN;HUANG, AN;JIAO, LIUYAN
分类号 H03F1/32 主分类号 H03F1/32
代理机构 代理人
主权项
地址