PIXEL STRUCTURE

摘要

A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.

主权项

1. A pixel structure, disposed on a substrate, comprising:
a channel layer, disposed on the substrate; a source electrode and a drain electrode, disposed on the channel layer, wherein the source electrode and the drain electrode are separated from each other; a pixel electrode, disposed on the substrate and electrically connected to the drain electrode, wherein the channel layer and the pixel electrode comprise a semiconductor material layer, and an oxygen content of the pixel electrode is less than an oxygen content of the channel layer; a first insulation layer, covering the channel layer; a gate electrode, disposed on the first insulation layer located above the channel layer; and a second insulation layer, covering the gate electrode and the first insulation layer, wherein the second insulation layer has a pixel opening, and the pixel opening exposes at least one partial region of the pixel electrode.